Support for a semiconductor structure
AssigneeSoitec
InventorsPatrick Reynaud, Marcel Broekaart, Frédéric Allibert, Christelle Veytizou, Luciana Capello, Isabelle Bertrand
Life of this patent
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Abstract
A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.
Claims21
A support for a semiconductor structure, comprising:
- a base substrate comprising one or more of silicon carbide and monocrystalline silicon;
- a silicon dioxide insulating layer on the base substrate, the silicon dioxide insulating layer having a thickness between 100 nm and 200 nm;
- a charge trapping layer on the silicon dioxide insulating layer, the charge trapping layer having a total thickness greater than 5 microns;
- an insulating layer on the charge trapping layer, wherein the insulating layer is silicon oxide or silicon nitride;
- a donor substrate on the insulating layer, wherein the donor substrate is silicon oxide or silicon nitride;
- and
- a useful layer over the insulating layer, the useful layer being formed from the donor substrate.
A semiconductor structure, comprising:
- a silicon dioxide insulating layer on a base substrate, the silicon dioxide insulating layer having a thickness greater than 20 nm;
- a charge trapping layer on the silicon dioxide insulating layer, the charge trapping layer having a thickness greater than 5 microns;
- an insulating layer on the charge trapping layer, wherein the insulating layer is silicon oxide or silicon nitride;
- a donor substrate on the insulating layer, wherein the donor substrate is silicon oxide or silicon nitride;
- and
- a useful layer over the charge trapping layer and the insulating layer, the useful layer being formed from the donor substrate.
A method of forming a support for a semiconductor structure, the method comprising:
- forming a silicon dioxide insulating layer on a base substrate, the silicon dioxide insulating layer having a thickness between 100 nm and 200 nm;
- depositing a charge trapping layer on the silicon dioxide insulating layer, the charge trapping layer having a total thickness greater than 5 microns;
- depositing an insulating layer on the charge trapping layer, wherein the insulating layer is silicon oxide or silicon nitride;
- depositing a donor substrate on the insulating layer, wherein the insulating layer is silicon oxide or silicon nitride;
- and
- forming a useful layer from the donor substrate.
A method of forming a semiconductor structure, the method comprising:
- forming a silicon dioxide insulating layer on a base substrate, the silicon dioxide insulating layer having a thickness greater than 20 nm;
- forming a charge trapping layer on the silicon dioxide insulating layer to form a support structure, the charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns;
- forming an insulating layer on the charge trapping layer, wherein the insulating layer is silicon dioxide or silicon nitride;
- bonding a donor substrate to the support structure over the charge trapping layer and the insulating layer, wherein the donor substrate is silicon dioxide or silicon nitride;
- and
- thinning the donor substrate to form a useful layer on the support structure.
Dependencies are inferred from the claim text.