Power semiconductor module, method for manufacturing the same and electrical converter

A method for manufacturing a power semiconductor module, wherein the power semiconductor module comprises a plurality of power semiconductor devices, said method comprising:

• a) providing at least one substrate for carrying the plurality of power semiconductor devices;
• and
• b) placing the plurality of power semiconductor devices on the at least one substrate;
• wherein, the method further comprises manufacturing steps as follows:
• c) determining, if one or more power semiconductor devices of the plurality of power semiconductor devices are damaged;
• d) electrically interconnecting at least a part of the power semiconductor devices comprising at least two power semiconductor devices in a parallel configuration;
• wherein, after realizing the steps e) and d) and in case of at least one power semiconductor device interconnected in a parallel configuration being a damaged power semiconductor device, electrically separating the at least one damaged power semiconductor device from non-damaged power semiconductor devices such that not all electrical connections between the at least one damaged power semiconductor device and the non-damaged power semiconductor devices are removed;
• and
• wherein, after realizing the steps c) and d), at least two of the electrically interconnected power semiconductor devices in the parallel configuration are non-damaged power semiconductor devices and at least one power semiconductor device which is provided with a measuring arrangement, wherein the measuring arrangement comprises at least one measuring point for measuring at least one of electronic, magnetic and temperature properties of the at least one power semiconductor device, the at least one measuring point being formed by a pre-determined breaking point corresponding to a position of an electrical interconnection structure having a reduced thickness and/or width.