Semiconductor structure and method
AssigneeSisusemi Oy
InventorsPekka Laukkanen, Juha-Pekka Lehtiö, Zahra Jahanshah Rad, Mikhail Kuzmin, Marko Punkkinen, Antti Lahti, Kalevi Kokko
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Abstract
This disclosure relates to a semiconductor structure (100), comprising a crystalline silicon substrate (110), having a surface (111), and a crystalline silicon oxide superstructure (120) on the surface (111) of the silicon substrate (110), the silicon oxide superstructure (120) having a thickness of at least two molecular layers and a (1×1) plane structure using Wood's notation.
Claims15
A semiconductor structure, comprising a crystalline silicon substrate, having a surface, and a superstructure on the surface of the silicon substrate, wherein the superstructure comprises silicon oxide that is crystalline, the superstructure having a thickness of at least two molecular layers and a (1×1) plane structure using Wood's notation, wherein the superstructure is formed on the surface as crystalline silicon oxide with no trace amounts of elements other than Si or O as impurities by:
- providing the silicon substrate, having a substantially clean deposition surface in a vacuum chamber;
- heating the silicon substrate to an oxidation temperature TO in a range from 100 to 530° C.;
- and
- while keeping the silicon substrate at the oxidation temperature, supplying molecular oxygen, O2, into the vacuum chamber with an oxidation pressure PO in a range from 1×10−8 millibars, mbar, to 1×10−4 mbar and an oxygen dose DO in a range from 0.1 to 10 000 Langmuir, L.
A method for forming a semiconductor structure, comprising a crystalline silicon substrate and a crystalline silicon oxide superstructure on the silicon substrate, the method comprising:
- providing the silicon substrate, having a substantially clean deposition surface in a vacuum chamber;
- heating the silicon substrate to an oxidation temperature TO in a range from 100 to 530° C.;
- and
- while keeping the silicon substrate at the oxidation temperature, supplying molecular oxygen, O2, into the vacuum chamber with an oxidation pressure PO in a range from 1×10−8 millibars, mbar, to 1×10−4 mbar and an oxygen dose DO in a range from 0.1 to 10 000 Langmuir, L;
- whereby the crystalline silicon oxide superstructure, made of silicon oxide that is crystalized with no trace amounts of elements other than Si or O as impurities, is formed on the deposition surface, the superstructure having a thickness of at least two molecular layers and a (1×1) plane structure using Wood's notation.
Dependencies are inferred from the claim text.