Semiconductor substrate with oxide single crystal heterostructures, manufacturing method thereof and electronic device using the same

A semiconductor substrate assembly having oxide single crystal heterostructures, comprising:

• a metal layer disposed on a semiconductor substrate;
• and
• an epitaxially grown oxide single crystal thin film layer having a perovskite structure bonded to the semiconductor substrate via the metal layer,
• wherein the epitaxially grown oxide single crystal thin film layer has crystallinity with a full width at half maximum (FWHM) of 0.1° or below when measured by an omega rocking curve at a peak of highest diffraction peak intensity in θ−2θ mode of an X-ray diffractometer,
• wherein the epitaxially grown oxide single crystal thin film layer is a pore-free thin film layer composed of a perovskite piezoelectric oxide, and
• wherein the epitaxially grown oxide single crystal thin film layer is formed on a sacrificial layer and transferred to the metal layer bonded to the semiconductor substrate.