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US 12,622,127 B2Granted
Perovskite optoelectronic device and manufacturing method therefor
AssigneesLG Display Co., Ltd., Seoul National University R&Db Foundation
InventorsJin Young Kim, Kiseok Chang, Kwanghwan Ji, Min-Ah Park, Chong Rae Park, Sae Jin Sung
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Abstract
The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.
Claims9
A perovskite optoelectronic device comprising:
- a substrate;
- a lower electrode disposed over the substrate;
- an electron transport layer disposed over the lower electrode;
- a light absorption layer disposed over the electron transport layer, the light absorption layer including perovskite;
- a hole transport layer disposed over the light absorption layer;
- and
- an upper electrode disposed over the hole transport layer,
- wherein at least one of the lower electrode and the upper electrode includes graphene oxide deposited on carbon nanotubes,
- wherein the lower electrode includes the graphene oxide stacked over the carbon nanotubes, and
- wherein the carbon nanotubes in the lower electrode, the graphene oxide in the lower electrode, the electron transport layer, the light absorption layer, the hole transport layer and the upper electrode are sequentially stacked over the substrate.
7 more elements
Dependencies are inferred from the claim text.