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US 12,622,101 B2Granted
Light emitting diode having improved hole injection structure
AssigneeSeoul Viosys Co., Ltd.
InventorsHongJae Yoo, SungRyong Cho, Miso Ko, Eunmi Choi
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Abstract
A light emitting device according to an embodiment of the present disclosure includes a first conductivity type semiconductor region; a second conductivity type semiconductor region; and a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the second conductivity type semiconductor region includes a plurality of regions including Mg balls.
Claims18
A light emitting device, comprising:
- a first conductivity type semiconductor region;
- a second conductivity type semiconductor region;
- and
- a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region,
- wherein the second conductivity type semiconductor region includes a first region, second region, and a third region,
- wherein the second region is disposed between the first region and the third region and has a greater thickness than a thickness of each of the first region and the third region, and
- wherein an amount of Magnesium (Mg) balls of the second region is lower than an amount of Mg Balls of the first region and the third region.
4 more elements
Dependencies are inferred from the claim text.