Infrared sensor and method of manufacturing infrared sensor

An infrared sensor comprising:

• a first semiconductor substrate including a first main surface and an infrared detection element disposed at the first main surface;
• a second semiconductor substrate including a second main surface facing the first main surface, and a signal processing circuit to process a signal of the infrared detection element;
• a sealing frame connected to the first semiconductor substrate and the second semiconductor substrate, surrounding the infrared detection element disposed at the first main surface, and forming an internal space that is hermetically sealed by the first main surface, the infrared detection element, and the second main surface;
• and
• a first connection disposed on the first main surface, located outside the sealing frame, and electrically connecting the infrared detection element and the signal processing circuit, wherein
• the internal space is hermetically sealed by the first main surface, the infrared detection element, the second main surface, and the sealing frame, and
• each of the sealing frame and the first connection is sandwiched between the first main surface and the second main surface, and
• the signal processing circuit is disposed in a region outside the internal space.