EUV light uniformity control apparatus, EUV exposure equipment including the same, and method of controlling EUV light uniformity by using the control apparatus

Extreme ultraviolet (EUV) exposure equipment comprising:

• an EUV source configured to generate and emit EUV light;
• a first optical system configured to transfer the EUV light from the EUV source to be incident on a reticle;
• a reticle stage on which the reticle is disposed;
• a second optical system configured to transfer the EUV light reflected by the reticle to a wafer that is an exposure target;
• and
• an EUV light uniformity control apparatus that is disposed under the reticle, that includes nano thin-films through which the EUV light passes, and that is configured to adjust the EUV light projected on the wafer,
• wherein the EUV light uniformity control apparatus comprises thin film mounts fixing each of the nano thin-films on two opposite sides in a first direction.

Extreme ultraviolet (EUV) exposure equipment comprising:

• an EUV source configured to generate and emit EUV light;
• a first optical system configured to transfer the EUV light from the EUV source to be incident to a reticle;
• a reticle stage on which the reticle is disposed;
• a second optical system configured to transfer the EUV light reflected by the reticle to a wafer that is an exposure target;
• a wafer stage on which the wafer is disposed;
• and
• an EUV light uniformity control apparatus disposed under the reticle and configured to adjust a uniformity of the EUV light on the wafer,
• wherein the EUV light uniformity control apparatus comprises:
• a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of the EUV exposure equipment and linearly arranged under the reticle in a second direction that is perpendicular to the first direction;
• thin film mounts fixing each of the plurality of nano thin-films on two opposite sides in the first direction;
• and
• a thin film control device connected to the thin film mounts and configured to control the plurality of nano thin-films, wherein;
• the EUV light is projected onto the wafer, after passing through the nano thin-films twice by being incident on and reflected from the reticle,
• the EUV light uniformity control apparatus is configured to adjust the EUV light to be uniform by using the thin film control device, the EUV light being projected on the wafer, and
• the thin film control device comprises at least one of a position adjusting device configured to move the thin film mounts or a voltage applying device configured to apply voltages to the plurality of nano thin-films via the thin film mounts.