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US 12,619,154 B2Granted
Lithography techniques for reducing defects
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hui Weng, Ching-Yu Chang
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Abstract
A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.
Claims20
A lithography method, comprising:
- forming a resist layer over a substrate, wherein the resist layer comprises a polymer;
- performing a treatment on the resist layer to form a first portion of the polymer having a first molecular weight and a second portion of the polymer having a second molecular weight less than the first molecular weight, wherein the first portion is located over the second portion;
- performing an exposure process on the resist layer;
- and
- performing a developing process on the resist layer to form a patterned resist layer.
2 more elements
A lithography method, comprising:
- forming a resist layer over a substrate, wherein the resist layer comprises a polymer and a cross-linker;
- treating the resist layer by a first process, wherein a degree of cross-linking increases from a lower portion of the polymer to an upper portion of the polymer;
- performing an exposure process on the resist layer by a second process different from the first process;
- and
- performing a developing process on the resist layer to form a patterned resist layer.
2 more elements
A lithography method, comprising:
- forming a first resist layer over a substrate, wherein the first resist layer comprises a first polymer and a first number of components;
- forming a second resist layer over the first resist layer, wherein the second resist layer comprises a second polymer and a second number of components greater than the first number of components;
- performing a treatment on the second resist layer;
- performing an exposure process on the first and second resist layers;
- and
- performing a developing process on the first and second resist layers to form patterned first and second resist layers.
3 more elements
Dependencies are inferred from the claim text.