High bandwidth travelling wave electro absorption modulator (EAM) chip
AssigneeMellanox Technologies, Ltd.
InventorsMoshe B. Oron, Elad Mentovich, Tali Septon, Oren Steinberg, Isabelle Cestier
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AssigneeMellanox Technologies, Ltd.
InventorsMoshe B. Oron, Elad Mentovich, Tali Septon, Oren Steinberg, Isabelle Cestier
Estimating the term…
High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.
An electro-absorption modulator (EAM) device comprising:
An integrated electro-absorption modulator (EAM)-laser device comprising:
A method of fabricating an electro-absorption modulator (EAM) device, the method comprising:
Dependencies are inferred from the claim text.