Wafer level electron beam prober
AssigneeIntel Corporation
InventorsXianghong Tong, Martin Von Haartman, Zhiyong Ma, Jennifer J. Huening, Hyuk Ju Ryu, Christopher Morgan, Shuai Zhao, Ramune Nagisetty, Tuyen K. Tran, Wen-Hsien Chuang
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Abstract
Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.
Claims23
A system, comprising:
- a wafer stage to receive a wafer comprising at least one die and to position the die for testing;
- a probe to contact a first region of a first side of the die and to provide a test signal to the first region of the first side of the die, wherein the probe comprises a probe card comprising a plurality of probe tips to contact pads of the first side of the die, and wherein the probe tips are adjacent a perimeter of the probe card and the probe card comprises a translucent or transparent region in an interior of the probe card at least partially surrounded by the perimeter;
- an electron-beam (e-beam) column to provide an e-beam to a second region of the first side of the die;
- a detector to detect an e-beam signal from the second region of the first side of the die;
- and
- a processor circuit to generate test data based on the e-beam signal.
A method, comprising:
- receiving a wafer comprising at least one die for testing;
- contacting a first region of a first side of the die, wherein contacting the first region comprises contacting the first region with a probe card, the probe card comprising a plurality of probe tips adjacent a perimeter of the probe card and a translucent or transparent region in an interior of the probe card at least partially surrounded by the perimeter;
- providing a test signal to the first region of the first side the die;
- emitting an electron-beam (e-beam) on a second region of the first side of the die;
- and
- receiving an e-beam signal from the second region of the first side of the die.
A method, comprising:
- pulling a vacuum in a chamber surrounding a wafer, the wafer comprising a plurality of dies for testing;
- positioning a first of the plurality of dies for testing of the first die;
- and
- during said pulling the vacuum in the chamber:
- providing a first test signal to a first region of a first side of the first die;
- attaining a first electron-beam (e-beam) signal from a second region of the first side of the first die during said providing the first test signal;
- positioning a second of the plurality of dies for testing of the second die;
- providing a second test signal to a first region of a first side of the second die;
- and
- attaining a second e-beam signal from a second region of the first side of the second die during said providing the second test signal.
A system, comprising:
- a wafer stage to receive a wafer comprising a first die and a second die, and to position the first die for testing;
- a probe to contact a first region of a first side of the first die and to provide a test signal to the first region of the first side of the first die;
- an electron-beam (e-beam) column to provide an e-beam to a second region of the first side of the first die;
- a detector to detect an e-beam signal from the second region of the first side of the first die;
- a chamber and a vacuum pump to pull a vacuum in the chamber comprising the first die during test, wherein at least portions of the wafer stage, the probe, and the e-beam column are within the chamber, and wherein the wafer stage is to position the second die of the wafer for testing while a continued vacuum is maintained during testing of the first die and the second die;
- and
- a processor circuit to generate test data based on the e-beam signal.
Dependencies are inferred from the claim text.