Thermal image sensor and method of manufacturing the same

A bolometer comprising:

• a substrate;
• a supporting arm provided on the substrate;
• and
• a multi-layer stack that is suspended above the substrate through the supporting arm and comprises:
• a sensing layer configured to convert light energy into heat energy;
• a first sensing electrode and a second sensing electrode which are in contact with the sensing layer;
• a channel formed between the first sensing electrode and the second sensing electrode;
• and
• an absorbing electrode connected to the first sensing electrode and configured to generate polarization in the sensing layer,
• wherein the substrate comprises at least one electrode connected to the first sensing electrode and the second sensing electrode to detect a change in a temperature of the sensing layer.

A method of manufacturing a thermal image sensor, the method comprising:

• (a) forming a row electrode and a column electrode on a substrate, followed by sequentially stacking a sacrificial layer and a protecting layer;
• (b) forming anchor holes to expose the row electrode and the column electrode by etching through the protecting layer to the sacrificial layer, and then patterning a first intervening electrode and a second intervening electrode in the anchor holes and the protecting layer;
• (c) forming a multi-layer stack on the protecting layer, the multi-layer stack comprising a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, and are connected to the first intervening electrode and the second intervening electrode, an absorbing electrode connected to the first sensing electrode, and an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer;
• and
• (d) removing the sacrificial layer.