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US 12,618,156 B2Granted
Atomic layer deposition of silicon nitride film using helium gas plasma
AssigneeTokyo Electron Limited
InventorMunehito Kagaya
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Abstract
A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.
Claims10
A substrate processing method comprising:
- (a) forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate;
- (b) after (a), modifying the adsorption layer by plasma of He gas;
- and
- (c) after (b), nitriding the modified adsorption layer by causing the modified adsorption layer to react with plasma of a nitrogen-containing reaction gas,
- wherein (a), (b), and (c) are repeated to form a silicon nitride film.
2 more elements
Dependencies are inferred from the claim text.