Selective non-plasma deposition of mask protection material
AssigneeTokyo Electron Limited
InventorsYu-Hao Tsai, Du Zhang, Peter Biolsi
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsYu-Hao Tsai, Du Zhang, Peter Biolsi
Estimating the term…
A method for selectively depositing a mask protection material using non-plasma treatments includes performing a non-plasma vapor treatment and performing a non-plasma halide treatment. During the non-plasma vapor treatment, a mask having openings exposing an underlying layer is treated with a non-plasma vapor to selectively deposit a first component of a mask protection material on the mask. During the non-plasma halide treatment, the mask and the underlying layer are treated with a non-plasma halide gas to selectively deposit a second component of the mask protection material on the mask. The non-plasma treatments are performed sequentially, but may be performed in either order. An optional pretreatment may be performed prior to the non-plasma treatments during which the mask is pretreated to form a reactive surface.
A method comprising:
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.