Methods for depositing phosphorus-doped silicon nitride films

A method of depositing a material on a substrate in a processing chamber, comprising:

• exposing a substrate to a deposition gas while depositing a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition process, wherein:
• the deposition gas comprises a silicon precursor, a nitrogen precursor, a phosphorus precursor, and a carrier gas;
• and
• the phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.5 atomic percent (at %) to about 8 at %.

A method of depositing a material on a substrate in a processing chamber, comprising:

• exposing a substrate to a deposition gas to deposit a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition process, wherein:
• the deposition gas comprises a silicon precursor, a nitrogen precursor, a phosphorus precursor, and a carrier gas;
• and
• the phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.1 atomic percent (at %) to about 10 at %;
• ceasing the plasma-enhanced chemical vapor deposition process;
• then
• exposing the substrate to a nitrogen plasma to densify the phosphorus-doped, silicon nitride film during a nitrogen-plasma process;
• ceasing the nitrogen-plasma process;
• and
• sequentially repeating cycles of the plasma-enhanced chemical vapor deposition process and the nitrogen-plasma process.