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US 12,618,134 B2Granted
Normal pulse profile modification in a film deposition process
AssigneeASM IP Holding B.V.
InventorChiyu Zhu
Life of this patent
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Abstract
There is disclosed apparatus and processes for the uniform controlled growth of materials on a substrate which direct a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow.
Claims13
A system for depositing a thin film on a substrate comprising:
- a reactor defining a reaction space therein;
- a first path and a second path in fluid communication with the reactor and the reaction space, wherein the first path and the second path intersect prior to the reactor;
- a single precursor source comprising a precursor, the single precursor source in fluid communication with the first path and the second path for delivering a precursor there through;
- and
- a controller configured to control of a flow of the precursor through each of the first and second paths to direct a plurality of pulsed flows of the precursor to the reaction space, wherein, in the reaction space, each pulsed flow comprises a combination of a first pulsed subflow and a second pulsed subflow of the same precursor flowing through the first path and the second path, respectively;
- wherein a pulse profile of the second pulsed subflow overlaps in time with at least a portion of a latter half of a pulse profile of the first pulsed subflow to form a combined pulsed subflow having a non-uniform pulse profile, and
- wherein a maximum in the pulse profile of the second pulsed subflow is greater than a maximum in the pulse profile of the first pulsed subflow.
4 more elements
A system for depositing a film on a substrate comprising:
- a reactor defining a reaction space therein;
- a first path and a second path in fluid communication with the reaction space;
- a precursor source comprising a precursor, the precursor source in fluid communication with the first path and the second path;
- and
- a controller configured to control of a flow of the precursor through the first and second paths to direct a plurality of pulsed flows of the precursor to the reaction space, wherein, in the reaction space, each pulsed flow comprises a combination of a first pulsed subflow and a second pulsed subflow of the precursor flowing through the first path and the second path, respectively;
- wherein a pulse profile of the second pulsed subflow overlaps in time with at least a portion of a latter half of a pulse profile of the first pulsed subflow, and
- wherein a duration of each of the first pulsed subflow and the second pulsed subflow is from 10 to 10000 ms.
4 more elements
A system for depositing a film on a substrate comprising:
- a reactor defining a reaction space therein;
- a first path and a second path in fluid communication with the reaction space;
- a precursor source comprising a precursor, the precursor source in fluid communication with the first path and the second path;
- and
- a controller configured to control of a flow of the precursor through each of the first and second paths to direct a plurality of pulsed flows of the precursor to the reaction space, wherein, in the reaction space, each pulsed flow comprises a combination of a first pulsed subflow and a second pulsed subflow of the precursor flowing through the first path and the second path, respectively;
- wherein a pulse profile of the second pulsed subflow overlaps in time with at least a portion of a latter half of a pulse profile of the first pulsed subflow, and
- wherein the precursor is a transition metal-containing compound;
- a silicon-containing compound;
- an organometallic compound;
- plasma, excited species, or radicals comprising nitrogen, oxygen or hydrogen;
- ammonia;
- O2;
- or O3.
10 more elements
Dependencies are inferred from the claim text.