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US 12,617,686 B2Granted
Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide
AssigneePallidus, Inc.
InventorMark S. Land
Life of this patent
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Claims19
A method of making a boule for the production of a silicon carbide wafer, having a diameter of from about 6 inches to about 10 inches, the wafer characterized with properties comprising:
- a dopant and a thickness of about 300 to 800 μm;
- the method comprising the steps of:
- forming a vapor from a doped polymer derived ceramic SiC starting material;
- wherein the doped polymer derived ceramic SiC starting material comprises a dopant held by a polymer derived ceramic SiC material;
- wherein the doped polymer derived ceramic SiC starting material has a purity of at least about 5 nines;
- depositing the vapor on a seed crystal to form a boule;
- and,
- providing the boule to a wafer manufacturing process.
5 more elements
Dependencies are inferred from the claim text.