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US 12,617,023 B2Granted
Silicon nitride ceramic tool comprising diamond film and method of preparing the same
AssigneeGuangdong University of Technology
InventorsChengyong Wang, Yuhai Zhou, Lijuan Zheng
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Abstract
A cutting tool, including a silicon nitride (Si3N4) ceramic substrate, and a diamond film coated on the surface of the Si3N4 ceramic substrate. The diamond film has a thickness of 7-12 μm. The cutting tool includes a tool nose, a blade, and a handle. The blade has a rake angle γ of 5-15°, a clearance angle α of 10-14°, and a helix angle of 15-45°. The blade includes four cutting edges.
Claims4
A method of preparing a cutting tool, the method comprising:
- 1. Putting a silicon nitride (Si3N4) ceramic substrate in a hexane suspension mixed with diamond powders, and ultrasonically vibrating the hexane suspension, to grow diamond seeds on the Si3N4 ceramic substrate, wherein the Si3N4 ceramic substrate further comprises TiN particles;
- and
- 2. Ultrasonically cleaning the Si3N4 ceramic substrate in acetone for 3-8 min, and then in 92-98% anhydrous alcohol for 2-4 min;
- drying the Si3N4 ceramic substrate and placing the Si3N4 ceramic substrate in a hot-wire chemical vapor deposition (CVD) vessel to produce the cutting tool;
- wherein
- the cutting tool comprises a diamond film coated on a surface of the Si3N4 ceramic substrate, and the diamond film having a thickness of 7-12 μm, an arithmetic average roughness (Ra) value of 8.1 nm, and a root mean square roughness (RMS) value of 8.6 nm.
3 more elements
Dependencies are inferred from the claim text.