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US 12,616,061 B2Granted
Semiconductor module
AssigneeRohm Co., Ltd.
InventorAtsushi Nochida
Life of this patent
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Abstract
The semiconductor module includes a first device that has an IGBT and a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT.
Claims11
A semiconductor module comprising:
- a first device that has an IGBT;
- and
- a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT,
- wherein a reverse current is to be flowed in the IGBT when a forward voltage of the reflux diode becomes not less than the reverse withstand voltage of the IGBT,
- the reverse current is not more than a forward current to be flowed in the reflux diode, and
- a ratio of the forward breakdown voltage of the reflux diode with respect to the reverse withstand voltage of the IGBT is excess of 1 and not more than 2.
3 more elements
Dependencies are inferred from the claim text.