Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first redistribution layer having a first height, the first redistribution layer comprising a first dielectric and a first conductive layer;
• a semiconductor die coupled to and electrically coupled to an upper side of the first redistribution layer, wherein:
• the semiconductor die comprises an interconnect comprising a bonding pad, a copper pillar, and/or a bump on a lower die side of the semiconductor die and over the upper side of the first redistribution layer,
• the interconnect electrically connects the semiconductor die to the first conductive layer of the first redistribution layer, and
• the first height of the first redistribution layer is less than a second height of the semiconductor die;
• a wire-bond wire on the first redistribution layer, wherein:
• a lower end of the wire-bond wire is electrically coupled to the first conductive layer of the first redistribution layer and extends directly vertically from the first conductive layer,
• an upper end of the wire-bond wire extends at least as high as an upper die side of the semiconductor die, and
• a third height of the wire-bond wire is greater than the second height of the semiconductor die;
• a first encapsulant that encapsulates the upper side of the first redistribution layer, the wire-bond wire, and the semiconductor die, where the first encapsulant comprises an upper encapsulant side facing away from the first redistribution layer and a lower encapsulant side facing toward the first redistribution layer, and wherein a fourth height of the first encapsulant is greater than the second height of the semiconductor die;
• a substrate over the upper encapsulant side of the first encapsulant, where the substrate is electrically coupled to the first conductive layer of the first redistribution layer through the wire-bond wire;
• a second encapsulant contacting the first redistribution layer, wherein lateral sides of the first redistribution layer are free of the second encapsulant;
• and
• a dielectric material having a bottom dielectric side and a top dielectric side, wherein:
• the bottom dielectric side contacts an upper die side of the semiconductor die, and
• the top dielectric side is free of the first encapsulant.

A method of manufacturing a semiconductor device, the method comprising:

• providing a first redistribution layer having a first height, the first redistribution layer comprising a first dielectric and a first conductive layer;
• coupling and electrically connecting a semiconductor die to an upper side of the first redistribution layer, wherein:
• the semiconductor die comprises an interconnect comprising a bonding pad, a copper pillar, and/or a bump on a lower die side of the semiconductor die and over the upper side of the first redistribution layer,
• the interconnect electrically connects the semiconductor die to the first conductive layer of the first redistribution layer, and
• the first height of the first redistribution layer is less than a second height of the semiconductor die;
• providing a wire-bond wire on the first redistribution layer, wherein:
• a lower end of the wire-bond wire is electrically coupled to the first conductive layer of the first redistribution layer and extends directly vertically from the first conductive layer,
• an upper end of the wire-bond wire extends at least as high as an upper die side of the semiconductor die, and
• a third height of the wire-bond wire is greater than the second height of the semiconductor die;
• providing a first encapsulant that encapsulates the upper side of the first redistribution layer, the wire-bond wire, and the semiconductor die, where the first encapsulant comprises an upper encapsulant side facing away from the first redistribution layer and a lower encapsulant side facing toward the first redistribution layer;
• providing a substrate over the upper encapsulant side of the first encapsulant, where the substrate is electrically coupled to the first conductive layer of the first redistribution layer through the wire-bond wire;
• and
• providing a dielectric material having a bottom dielectric side and a top dielectric side, wherein:
• a first portion of the bottom dielectric side contacts an upper die side of the semiconductor die,
• a second portion of the bottom dielectric side contacts the first encapsulant, and
• the top dielectric side is free of the first encapsulant.