Semiconductor device and method of forming inverted EWLB package with vertical e-bar structure

A semiconductor device, comprising:

• an electrical component;
• an e-bar structure disposed adjacent to the electrical component, wherein the e-bar structure includes,
• (a) a core layer,
• (b) a first conductive layer formed over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
• (c) a second conductive layer formed over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is greater than the thickness of the first conductive layer;
• and
• a redistribution layer (RDL) formed over the electrical component and e-bar structure.

A method of making a semiconductor device, comprising:

• providing an electrical component;
• disposing an e-bar structure to a side of the electrical component by,
• (a) providing a core layer,
• (b) forming a first single conductive layer over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
• (c) forming a second single conductive layer over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is at least 10.0 micrometers greater than the thickness of the first single conductive layer;
• depositing an encapsulant over the electrical component and e-bar structure;
• and
• forming a redistribution layer (RDL) over the electrical component, encapsulant, and e-bar structure.

A method of making a semiconductor device, comprising:

• providing an electrical component;
• disposing an e-bar structure adjacent to the electrical component by,
• (a) providing a core layer,
• (b) forming a first conductive layer over a first surface of the core layer and having a thickness in a range of 17.0-30.0 micrometers, and
• (c) forming a second conductive layer over a second surface of the core layer and having a thickness of at least 40.0 micrometers, wherein the thickness of the second single conductive layer is greater than the thickness of the first conductive layer;
• and
• forming a redistribution layer (RDL) over the electrical component and e-bar structure.