Wafer bonding incorporating thermal conductive paths

A method comprising:

• forming a first device die comprising:
• a semiconductor substrate;
• an interconnect structure underlying the semiconductor substrate;
• a first bond layer underlying the interconnect structure;
• and
• a first thermal conductive channel extending from a bottom surface of the first bond layer into the semiconductor substrate, wherein the first thermal conductive channel is electrically floating;
• and
• bonding a package component underlying the first device die and thermally coupled to the first device die.

A method comprising:

• forming a device die comprising:
• a first semiconductor substrate;
• an interconnect structure underlying the first semiconductor substrate;
• a first bond layer underlying the interconnect structure;
• a first thermal conductive channel in the first bond layer;
• bonding a first package component to the device die, wherein the first package component comprises:
• a second bond layer underlying and joined to the first bond layer;
• and
• a second thermal conductive channel in the second bond layer, wherein the second thermal conductive channel is joined to the first thermal conductive channel, and wherein the first thermal conductive channel and the second thermal conductive channel are electrically floating;
• and
• attaching the first package component to a second package component through a thermal interface material.