Semiconductor and method for forming the same

A semiconductor structure, comprising:

• a substrate;
• a first conductive layer formed on the substrate;
• a chip disposed on the substrate;
• a first dielectric layer surrounding the chip;
• a second conductive layer disposed on the first dielectric layer and electrically insulated from the first conductive layer, wherein the first dielectric layer is disposed between the first conductive layer and the second conductive layer;
• a plurality of first vias formed in the first dielectric layer and electrically connected to the first conductive layer, wherein the first vias are arranged in a first direction, and the first vias comprises a first via column and a third via column extending in a second direction different from the first direction;
• and
• a plurality of second vias formed in the first dielectric layer and electrically connected to the second conductive layer, wherein the second vias are arranged in the first direction, and the second vias comprises a second via column and a fourth via column extending in the second direction, wherein the first via column, the second via column, the third via column, and the fourth via column are arranged in sequence in a third direction different form the first direction and the second direction;
• wherein in a top view, the first vias are spaced apart from the second vias;
• wherein in the third direction, the first vias overlaps the second vias.

A semiconductor structure, comprising:

• a substrate;
• a first conductive layer disposed on the substrate;
• a chip disposed on the substrate, wherein the chip is electrically connected to the first conductive layer;
• a first dielectric layer disposed on the substrate and having a first surface and a second surface opposite from each other;
• a second dielectric layer disposed on the first dielectric layer;
• a second conductive layer disposed in the second dielectric layer, wherein the chip is electrically connected to the second conductive layer;
• a plurality of first vias disposed in the first dielectric layer, extending from the first surface to the second surface, electrically connected to the first conductive layer, and electrically insulated from the second conductive layer;
• and
• a plurality of second vias disposed in the first dielectric layer, extending from the first surface to the second surface, electrically insulated from the first conductive layer, and electrically connected to the second conductive layer, wherein the first via structure and the second via structure are electrically insulated from each other.