Back to results
US 12,616,028 B2Granted
Seal ring structure in a semiconductor device and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsQian Li, Shu Wu, Liang Xiao
Life of this patent
Estimating the term…
Abstract
In certain aspects, a semiconductor device includes a first semiconductor layer, a first semiconductor structure formed on the first semiconductor layer including a main chip region, and seal ring discontinuous contact structures formed in a seal ring region enclosing the main chip region. Each seal ring discontinuous contact structure includes a seal ring body portion and a through silicon contact (TSC) portion penetrating through the first semiconductor layer and coupled to the seal ring body portion.
Claims19
A semiconductor device, comprising:
- a first semiconductor layer;
- a first semiconductor structure on the first semiconductor layer comprising a main chip region, wherein the first semiconductor structure comprises a first stack structure having interleaved conductive layers and dielectric layers;
- one or more channel structures each extending through a core array region of the first stack structure;
- seal ring discontinuous contact structures in a seal ring region;
- a source contact on a bottom portion of the one or more channel structures;
- and
- a channel plug on a top portion of the one or more channel structures,
- wherein the seal ring region encloses the main chip region, and
- wherein each seal ring discontinuous contact structure comprises a seal ring body portion extending until the first semiconductor layer.
6 more elements
Dependencies are inferred from the claim text.