Metal insulator metal (MIM) capacitor architectures

An integrated circuit structure comprising:

• a first capacitor having electrodes over and under a first insulator;
• a second capacitor stacked on the first capacitor, the second capacitor having electrodes over and under a second insulator, wherein the first insulator and the second insulator comprise strontium, titanium, and oxygen;
• and
• a third capacitor stacked on the second capacitor, the third capacitor having electrodes over and under a third insulator, wherein the third insulator comprises hafnium, aluminum, and oxygen.

A metal insulator metal (MIM) capacitor, comprising:

• a first electrode;
• a first metal layer over the first electrode, wherein portions of the first electrode extend along sides of the first metal layer and above an uppermost surface of the first metal layer;
• an insulator over the first metal;
• a second electrode over the insulator;
• and
• a second metal layer over the second electrode.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including a metal-insulator-metal (MIM) capacitor, comprising:
• a first electrode that includes a bottom region and a pair of vertical regions, the bottom region coupling the vertical regions of the pair of vertical regions;
• first metal layers outside the vertical regions and in contact with the vertical regions;
• an insulator over the first electrode;
• a second electrode over the insulator;
• and
• a second metal layer on a top surface of the second electrode.