Back to results
US 12,616,019 B2Granted
Via connection to backside power delivery network
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Kisik Choi, Somnath Ghosh, Julien Frougier, Stuart Sieg, Kevin Shawn Petrarca
Life of this patent
Estimating the term…
Abstract
A semiconductor structure including a middle-of-line contact, a backside power rail, and a contact via extending between the middle-of-line contact and the backside power rail, wherein the contact via comprises a first portion having a negative tapered profile and a second portion having a positive tapered profile.
Claims17
A semiconductor structure comprising:
- a middle-of-line contact;
- a backside power rail;
- and
- a contact via extending from the middle-of-line contact to the backside power rail, wherein the contact via comprises a first portion having a negative tapered profile and a second portion having a positive tapered profile, wherein a sidewall of the contact via directly contacts a source drain epitaxy.
1 more element
A semiconductor structure comprising:
- a middle-of-line contact;
- a backside power rail;
- and
- a contact via extending between the middle-of-line contact and the backside power rail, wherein an upper portion of the contact via comprises a positive tapered profile, and wherein a lower portion of the contact via comprises a negative tapered profile, wherein a sidewall of the contact via directly contacts a source drain epitaxy.
1 more element
A semiconductor structure comprising:
- a middle-of-line contact;
- a backside power rail;
- and
- a contact via extending between the middle-of-line contact and the backside power rail, wherein an upper portion of the contact via comprises a negative tapered profile, and wherein a lower portion of the contact via comprises a positive tapered profile, wherein a sidewall of the contact via directly contacts gate spacers.
1 more element
Dependencies are inferred from the claim text.