Semiconductor device and method

A method comprising:

• forming a first dielectric layer over a first substrate, the first dielectric layer having a first metallization pattern therein;
• forming a second dielectric layer over the first dielectric layer and the first metallization pattern;
• forming a sacrificial pad over and extending through the second dielectric layer, the sacrificial pad being electrically coupled to a first conductive feature in the first metallization pattern;
• performing a circuit probe test on the sacrificial pad;
• after performing the circuit probe test, performing an etch process, the etch process removing the sacrificial pad;
• and
• after removing the sacrificial pad, forming a bond via in a third dielectric layer over the second dielectric layer and the first conductive feature, the third dielectric layer physically contacting the first conductive feature, the bond via being electrically coupled to a second conductive feature in the first metallization pattern;
• and
• forming a first bond pad in a fourth dielectric layer over the bond via and the third dielectric layer, the first bond pad being electrically coupled to the bond via.