Semiconductor device including a self-aligned contact layer with enhanced etch resistance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Ming Chang, Yao-Sheng Huang, Hsiang-Pi Chang, Lo-Heng Chang, Yun-Ju Fan, Huang-Lin Chao
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Abstract
A semiconductor device includes a semiconductor fin, an epitaxial region located on a side of the semiconductor fin, a silicide layer disposed on the epitaxial region, a contact plug disposed on the silicide layer and over the epitaxial region, and a self-aligned contact (SAC) layer disposed on the semiconductor fin. At least a part of the SAC layer is implanted with at least one implantation element. The semiconductor fin is spaced apart from the contact plug by the SAC layer.
Claims20
A semiconductor device, comprising:
- a semiconductor fin;
- an epitaxial region located on a side of the semiconductor fin;
- a silicide layer disposed on the epitaxial region;
- a contact plug disposed on the silicide layer and over the epitaxial region;
- and
- a self-aligned contact (SAC) layer disposed on the semiconductor fin, at least a part of the SAC layer being implanted with at least one implantation element, the semiconductor fin being spaced apart from the contact plug by the SAC layer.
A method for manufacturing a semiconductor device, comprising:
- forming a self-aligned contact (SAC) layer on a semiconductor fin, the semiconductor fin being disposed beside an epitaxial region;
- performing an implantation process on the SAC layer to implant at least one implantation element into the SAC layer;
- forming a silicide layer on the epitaxial region;
- and
- forming a contact plug on the silicide layer beside the SAC layer, the semiconductor fin being spaced apart from the contact plug by the SAC layer.
A method for manufacturing a semiconductor device, comprising:
- forming an epitaxial region on a lateral side of a semiconductor fin in a first direction;
- forming a self-aligned contact (SAC) layer on the semiconductor fin in a second direction different from the first direction, the SAC layer having an upper part and a lower part which are respectively distal from and proximate to the semiconductor fin;
- performing an implantation process on the SAC layer to implant at least one implantation element into the upper part of the SAC layer;
- after performing the implantation process, forming a silicide layer on the epitaxial region in the second direction;
- and
- forming a contact plug on the silicide layer opposite to the epitaxial region, the semiconductor fin being spaced apart from the contact plug by the SAC layer.
Dependencies are inferred from the claim text.