Integrated circuit device

An integrated circuit device comprising:

• a substrate including a fin-type active region protruding from the substrate;
• a source/drain region on the fin-type active region;
• a gate line on the fin-type active region, the gate line extending in a direction intersecting the fin-type active region;
• a lower insulating structure covering the source/drain region;
• a source/drain contact passing through the lower insulating structure in a vertical direction, the source/drain contact being connected to the source/drain region;
• a capping insulating pattern covering a top surface of the gate line;
• a middle insulating structure on the source/drain contact and the capping insulating pattern;
• a first contact structure passing through the middle insulating structure in the vertical direction, the first contact structure being connected to the source/drain contact;
• and
• a second contact structure passing through the middle insulating structure and the capping insulating pattern in the vertical direction, the second contact structure being connected to the gate line, wherein
• the first contact structure has a first top surface extending planar in an extension line of a top surface of the middle insulating structure,
• the second contact structure has a second top surface, and
• the second top surface is convex from the top surface of the middle insulating structure in a direction away from the substrate.

An integrated circuit device comprising:

• a substrate;
• a source/drain region on the substrate;
• a gate line on the substrate;
• a capping insulating pattern covering a top surface of the gate line;
• a source/drain contact connected to the source/drain region;
• a middle insulating structure on the source/drain contact and the capping insulating pattern;
• a first contact structure passing through the middle insulating structure, the first contact structure being connected to the source/drain contact;
• and
• a second contact structure passing through the middle insulating structure and the capping insulating pattern, the second contact structure being connected to the gate line, wherein
• the first contact structure incudes a first tungsten liner in contact with the middle insulating structure and a first tungsten plug having a bottom surface and sidewalls in contact with the first tungsten liner,
• the first contact structure has a first top surface extending planar along an extension line of a top surface of the middle insulating structure,
• the second contact structure includes a second tungsten liner in contact with the middle insulating structure and the capping insulating pattern, a second tungsten plug having a bottom surface and sidewalls surrounded by the second tungsten liner, and a tungsten nucleation layer between the second tungsten liner and the second tungsten plug,
• the second contact structure has a second top surface,
• the second top surface is convex from the top surface of the middle insulating structure in a direction away from the substrate, and
• nonmetal or semimetal elements are irregularly dispersed in the tungsten nucleation layer.