Method for fabricating a semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming a semiconductor pattern including a silicon layer on a substrate;
• forming a dyeing layer including a fluorophore on a surface of the silicon layer;
• and
• photographing the fluorophore using any one of a STORM (Stochastic Optical Reconstruction Microscopy), a STED (Stimulated Emission Depletion), a SSIM (Saturated Structured Illumination Microscopy), or a PALM (Photoactivated Localization Microscopy) to detect the semiconductor pattern,
• wherein the forming of the dyeing layer includes:
• forming a coating layer on the surface of the silicon layer,
• forming a dyeing substance in which any one of an antibody or a protein is combined with the fluorophore, and
• attaching the dyeing substance to a surface of the coating layer to form the dyeing layer.

A method for fabricating a semiconductor device, the method comprising:

• forming a semiconductor pattern including a silicon layer on a substrate;
• forming a dyeing layer including a fluorophore on a surface of the silicon layer;
• and
• photographing the fluorophore using any one of a STORM (Stochastic Optical Reconstruction Microscopy), a STED (Stimulated Emission Depletion), a SSIM (Saturated Structured Illumination Microscopy), or a PALM (Photoactivated Localization Microscopy) to detect the semiconductor pattern,
• wherein the forming of the dyeing layer includes:
• forming a hydroxyl group on the surface of the silicon layer,
• combining a target substance having an amino group as an end group to the surface of the silicon layer, and
• attaching the fluorophore to the target substance to form the dyeing layer.