Chip bonding method

A die bonding method, comprising:

• providing a device wafer, a front side of the device wafer having a first hybrid bonding structure formed thereon, the first hybrid bonding structure comprises conductive bonding pads, a material of the conductive bonding pads in the first hybrid bonding structure comprises copper;
• coating a bonding adhesive on the front side of the device wafer and temporarily bonding a carrier wafer to the front side of the device wafer;
• forming a back-side connection structure on a back side of the device wafer, the back-side connection structure electrically connected to a first interconnect structure in the device wafer;
• debonding the device wafer from the carrier wafer, with the bonding adhesive being retained;
• dicing the device wafer from the front side of the device wafer, thereby separating the device wafer into a plurality of individual dies, the bonding adhesive covers the first interconnect structure, configured to isolate the conductive bonding pads from external environment during the dicing process;
• and
• removing the bonding adhesive and providing a target wafer, a surface of the target wafer having a second hybrid bonding structure formed thereon, and bonding front sides of good dies to the target wafer with the aid of the first hybrid bonding structure and the second hybrid bonding structure.