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US 12,615,996 B2Granted
Semiconductor device transfer structure, display apparatus, and method of manufacturing display apparatus
AssigneeSamsung Electronics Co., Ltd.
InventorsDongkyun Kim, Hyunjoon Kim, Seogwoo Hong, Kyungwook Hwang, Junsik Hwang
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Abstract
A semiconductor device transfer structure, a display apparatus, and a method of manufacturing the display apparatus are provided. The semiconductor device transfer structure includes: a substrate; an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device; and a transfer layer provided on the alignment layer and including a groove.
Claims17
A semiconductor device transfer structure comprising:
- a substrate;
- an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device, the semiconductor device including an electrode;
- and
- a transfer layer provided on an upper surface of the alignment layer and including a groove having a cross-sectional area greater than that of the trap,
- wherein the trap is located deeper than the groove, and the trap is located to overlap the groove,
- wherein a width of the groove in a horizontal direction is greater than a width of the trap in the horizontal direction, and a portion of the upper surface of the alignment layer is within the groove and exposed from the transfer layer,
- wherein the width of the trap in the horizontal direction is greater than a maximum width of the semiconductor device in the horizontal direction and less than or equal to 1.2 times the maximum width of the semiconductor device in the horizontal direction, and
- wherein the trap has a depth ranging from 0.1 to 0.2 times a depth of the groove.
5 more elements
A display apparatus comprising:
- a substrate;
- an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device;
- a transfer layer provided on an upper surface of the alignment layer and including a groove having a cross-sectional area greater than that of the trap;
- a semiconductor device arranged in the trap, the semiconductor device comprising an electrode;
- and
- a driving circuit configured to drive the semiconductor device,
- wherein the trap is located deeper than the groove, and the trap is located to overlap the groove,
- wherein a width of the groove in a horizontal direction is greater than a width of the trap in the horizontal direction, and a portion of the upper surface of the alignment layer is within the groove and exposed from the transfer layer,
- wherein the width of the trap in the horizontal direction is greater than a maximum width of the semiconductor device in the horizontal direction and less than or equal to 1.2 times the maximum width of the semiconductor device in the horizontal direction, and
- wherein the trap has a depth ranging from 0.1 to 0.2 times a depth of the groove.
7 more elements
A method of manufacturing a display apparatus, the method comprising:
- forming an alignment layer including a trap on a substrate;
- forming a transfer layer on an upper surface of the alignment layer and including a groove that is stepped with respect to the trap, the transfer layer having a cross-sectional area greater than a cross-sectional area of the trap;
- positioning a semiconductor device in the groove, the semiconductor device including an electrode;
- and
- aligning the semiconductor device with the trap,
- wherein a width of the groove in a horizontal direction is greater than a width of the trap in the horizontal direction, and a portion of the upper surface of the alignment layer is within the groove and exposed from the transfer layer,
- wherein the width of the trap in the horizontal direction is greater than a maximum width of the semiconductor device in the horizontal direction and less than or equal to 1.2 times the maximum width of the semiconductor device in the horizontal direction, and
- wherein the trap has a depth ranging from 0.1 to 0.2 times a depth of the groove.
5 more elements
Dependencies are inferred from the claim text.