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US 12,615,980 B2Granted
Etching of indium gallium zinc oxide
AssigneeLam Research Corporation
InventorsAaron Lynn Routzahn, Andreas Fischer, Thorsten Bernd Lill
Life of this patent
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Abstract
Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.
Claims23
A method comprising:
- providing a wafer to a processing chamber, the wafer having a layer of indium gallium zinc oxide;
- heating the wafer to a first temperature;
- and
- etching the layer of indium gallium zinc oxide by modifying a surface of the layer of indium gallium zinc oxide by flowing a first chemical species comprising a fluoride onto the wafer to create a layer of indium gallium zinc oxyfluoride while the wafer is at the first temperature, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide, onto the wafer,
- wherein the modifying includes using a plasma and the removing does not use plasma,
- wherein the plasma is a remote plasma,
- wherein the modifying occurs while the wafer is maintained at the first temperature, and
- wherein the removing occurs while the wafer is maintained at a second temperature different than the first temperature.
5 more elements
A method comprising:
- providing a wafer to a processing chamber, the wafer having a layer of indium gallium zinc oxide;
- heating the wafer to a first temperature;
- and
- etching the layer of indium gallium zinc oxide by modifying a surface of the layer of indium gallium zinc oxide by flowing a first chemical species comprising a fluoride onto the wafer to create a layer of indium gallium zinc oxyfluoride while the wafer is at the first temperature, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide, onto the wafer, wherein:
- the modifying includes flowing a first process gas comprising the first chemical species,
- the removing includes flowing a second process gas comprising the second chemical species,
- flowing the first process gas is performed for a first time period, and
- flowing the second process gas is performed for a second time period different than the first time period.
5 more elements
A method comprising:
- providing a wafer to a processing chamber, the wafer having a layer of indium gallium zinc oxide;
- heating the wafer to a first temperature;
- and
- etching the layer of indium gallium zinc oxide by modifying a surface of the layer of indium gallium zinc oxide by flowing a first chemical species comprising a fluoride onto the wafer to create a layer of indium gallium zinc oxyfluoride while the wafer is at the first temperature, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide, onto the wafer, wherein:
- the modifying occurs while the processing chamber is maintained at a first pressure, and
- the removing occurs while the processing chamber is maintained at a second pressure different than the first pressure.
3 more elements
Dependencies are inferred from the claim text.