Resistive random access memory and method of preparing the same

A resistive random access memory, comprising:

• a resistive layer arranged on a substrate, and the resistive layer is configured to cause a device to generate a high resistance state or a low resistance state when the device performs a writing operation or an erasing operation;
• an upper electrode, arranged on the resistive layer, and the upper electrode is configured as an extraction electrode of the device;
• and
• a barrier structure arranged between the resistive layer and the upper electrode, and the barrier structure is configured for an electron to pass through a conduction band of the barrier structure when the device performs the erasing operation, so as to avoid forming of a defect in the resistive layer and causing a reverse breakdown of the resistive layer,
• wherein the barrier structure comprises:
• a barrier layer arranged on the resistive layer, and the barrier layer is configured as a storage layer of oxygen ions when the device performs the erasing operation, so that the electron passes through the conduction band of the barrier layer;
• and an intercalation layer arranged between the barrier layer and the upper electrode, and the intercalation layer is configured as an auxiliary storage layer of the oxygen ions when the device performs the erasing operation, so as to further prevent the oxygen ions from directly entering the upper electrode;
• wherein a material of the resistive layer is Ta2O5;
• wherein a material of the barrier layer is TaOx, wherein x∈[1.1, 1.8];
• wherein a material of the intercalation layer is at least one of Ta, Ti, a metal oxide, an amorphous silicon, an amorphous carbon and a graphene, wherein a thickness of the intercalation layer is 2 nm-20 nm;
• and
• wherein a barrier between the barrier layer and the resistive layer is 0.45 eV-0.65 eV.