Ultra-thin phase-change memory device with lateral electrode configuration

A data processing system comprising:

• a control system;
• and
• one or more phase-change memory (PCM) devices, wherein each device of the one or more PCM devices is connected to the control system and comprises a PCM cell embedded in an electrically insulating material, wherein the PCM cell includes:
• a phase-change material layer having a top surface, a bottom surface, and a side surface linking the top surface and the bottom surface;
• an outer electrode contacting the side surface of the phase-change material layer, wherein the outer electrode extends vertically along the side surface of the phase-change material layer;
• and
• a heater extending at least partially through the phase-change material layer, transversely to the top surface and the bottom surface of the phase-change material layer, thereby contacting the phase-change material layer.

A method of operating a phase-change memory (PCM) device, the method comprising:

• providing a PCM device comprising a PCM cell embedded in an electrically insulating material, wherein the PCM cell includes:
• a phase-change material layer having a top surface, a bottom surface, and a side surface linking the top surface and the bottom surface;
• an outer electrode contacting the side surface of the phase-change material layer, wherein the outer electrode extends vertically along the side surface of the phase-change material layer;
• and
• a heater extending at least partially through the phase-change material layer, transversely to the top surface and the bottom surface of the phase-change material layer, so as to contact the phase-change material layer, and
• repeatedly applying, through the heater,
• a RESET current pulse to grow an annular amorphous region in the phase-change material layer from the heater and accordingly bring the phase-change material layer to a high-resistance state, and
• a SET current pulse to decrease the annular amorphous region in the phase-change material layer and accordingly bring the phase-change material layer to a low-resistance state.

A phase-change memory (PCM) device comprising:

• an electrically insulating material;
• and
• a PCM cell embedded in the electrically insulating material, the PCM cell including:
• a phase-change material layer having a top surface, a bottom surface, and a side surface linking the top surface and the bottom surface,
• a PCM electrically insulating material layer located on top of phase-change material layer,
• a protection layer on top of the PCM electrically insulating material layer,
• an outer electrode contacting the side surface of the phase-change material layer, wherein the outer electrode extends vertically along the side surface of the phase-change material layer;
• and
• a heater extending at least partially through the phase-change material layer, transversely to the top surface and the bottom surface of the phase-change material layer, thereby contacting the phase-change material layer.