Magnetoelectric logic with magnetic tunnel junctions

An apparatus comprising:

• a first magnetoelectric magnetic tunnel junction (MEMTJ);
• and
• a second MEMTJ, individual of the first MEMTJ and the second MEMTJ comprising:
• a magnetoelectric capacitor comprising:
• a first electrode;
• a first ferromagnetic layer;
• and
• a magnetoelectric layer positioned between the first electrode and the first ferromagnetic layer;
• a first magnetic tunnel junction comprising:
• a second ferromagnetic layer;
• a third ferromagnetic layer;
• and
• a first insulating layer positioned between the second ferromagnetic layer and the third ferromagnetic layer;
• a second magnetic tunnel junction comprising:
• a fourth ferromagnetic layer;
• a fifth ferromagnetic layer;
• and
• a second insulating layer positioned between the fourth ferromagnetic layer and the fifth ferromagnetic layer;
• a conductive layer positioned between the first ferromagnetic layer and the second ferromagnetic layer and between the first ferromagnetic layer and the fourth ferromagnetic layer;
• and
• a second electrode positioned adjacent to the conductive layer;
• wherein the second electrode of the first MEMTJ is conductively coupled to the first electrode of the second MEMTJ.

An apparatus comprising:

• a first magnetoelectric magnetic tunnel junction (MEMTJ);
• a second MEMTJ;
• a third MEMTJ;
• and
• a fourth MEMTJ, individual of the first MEMTJ, the second MEMTJ, the third MEMTJ, and the fourth MEMTJ comprising:
• a magnetoelectric capacitor comprising:
• a first electrode;
• a first ferromagnetic layer;
• and
• a magnetoelectric layer positioned between the first electrode and the first ferromagnetic layer;
• a first magnetic tunnel junction comprising:
• a second ferromagnetic layer;
• a third ferromagnetic layer;
• and
• a first insulating layer positioned between the second ferromagnetic layer and the third ferromagnetic layer;
• a second magnetic tunnel junction comprising:
• a fourth ferromagnetic layer;
• a fifth ferromagnetic layer;
• and
• a second insulating layer positioned between the fourth ferromagnetic layer and the fifth ferromagnetic layer;
• a conductive layer positioned between the first ferromagnetic layer and the second ferromagnetic layer and between the first ferromagnetic layer and the fourth ferromagnetic layer;
• and
• a second electrode positioned adjacent to the conductive layer;
• wherein the second electrode of the first MEMTJ, the second electrode of the second MEMTJ, and the second electrode of the third MEMTJ are conductively coupled to the first electrode of the first MEMTJ.