Semiconductor substrate processing tool with hot plate chamber

A processing tool, comprising:

• a hot plate disposed within a processing chamber and having an upper surface configured to hold a semiconductor wafer, wherein the hot plate comprises a heating element configured to increase a temperature of the hot plate to an elevated temperature;
• an orientor device comprising an imaging device and a rotational device;
• and
• orientor control circuitry coupled to the orientor device and configured to operate the imaging device to locate a notch on the semiconductor wafer when the semiconductor wafer is in the processing chamber and to operate the rotational device to rotate the semiconductor wafer within the processing chamber so that the notch moves along a circular path while the hot plate is at the elevated temperature to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer, wherein the orientor control circuitry is arranged within the processing chamber and is configured to rotate the semiconductor wafer between cycles of a baking process;
• and
• a plurality of gas exhaust openings in communication with the hot plate, wherein the plurality of gas exhaust openings are arranged along a first pair of opposing sides of the processing chamber.

A processing tool, comprising:

• a hot plate disposed within a processing chamber and having an upper surface configured to hold a semiconductor substrate, wherein the hot plate comprises a heating element configured to increase a temperature of the hot plate to an elevated temperature;
• a plurality of gas exhaust openings in communication with the processing chamber, wherein the plurality of gas exhaust openings are arranged along a first pair of opposing sides of the processing chamber;
• an orientor device comprising an imaging device and a rotational device;
• and
• orientor control circuitry coupled to the orientor device and configured to operate the imaging device to locate a notch on the semiconductor substrate when the semiconductor substrate is in the processing chamber and to operate the rotational device to rotate the semiconductor substrate within the processing chamber over multiple full 360-degree rotations so that the notch moves along a circular path while the hot plate is at the elevated temperature, wherein the orientor control circuitry is arranged within the processing chamber and is configured to rotate the semiconductor substrate between cycles of a baking process.