Display apparatus
AssigneeLG Display Co., Ltd.
InventorsPyungho Choi, Hyunseok Na, JaeJun Ahn, Hyoungsun Park, Hyunchyol Shin, Seongsoo Cho
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Abstract
A display apparatus is disclosed. The display apparatus according to the present disclosure may include a substrate including an active area and a non-active area around the active area, a first shield layer disposed on the substrate, a first thin film transistor including a first semiconductor layer on the first shield layer, a first etch stopper on the first semiconductor layer, a second thin film transistor including a second semiconductor layer on the substrate, and a second etch stopper on the second semiconductor layer.
Claims21
A display apparatus, comprising:
- a substrate including an active area and a non-active area around the active area;
- a first shield layer on the substrate;
- a first thin film transistor including a first semiconductor layer that is on the first shield layer;
- a first etch stopper on the first semiconductor layer;
- a second thin film transistor including a second semiconductor layer that is on the substrate;
- and
- a second etch stopper on the second semiconductor layer,
- wherein the first thin film transistor further includes:
- a first gate electrode on the first etch stopper, and
- a first source electrode and a first drain electrode that pass through the first etch stopper and are connected to the first semiconductor layer, and
- wherein the first shield layer is connected to the first source electrode.
A display apparatus, comprising:
- a substrate including an active area and a non-active area around the active area;
- a first shield layer on the substrate;
- a first thin film transistor including a first semiconductor layer on the first shield layer and a source electrode of the first thin film transistor, the first shield layer connected to the source electrode of the first thin film transistor;
- a second thin film transistor including a second semiconductor layer on the substrate and a source electrode of the second thin film transistor;
- a second shield layer between the substrate and the second semiconductor layer, the second shield layer being connected to the source electrode of the second thin film transistor;
- and
- a third thin film transistor on the substrate, the third thin film transistor including a third semiconductor layer.
Dependencies are inferred from the claim text.