Method for fabricating display device including forming pixel electrode, el layer, and sacrificial layer

A method for fabricating a display device, comprising:

• a first step of forming a first EL film over a first pixel electrode and a second pixel electrode;
• a second step of forming a first sacrificial film covering the first EL film;
• a third step of etching the first sacrificial film and the first EL film to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer;
• a fourth step of forming a second EL film over the first sacrificial layer and the second pixel electrode;
• a fifth step of forming a second sacrificial film covering the second EL film;
• a sixth step of etching the second sacrificial film and the second EL film to expose the first sacrificial layer and to form a second EL layer over the second pixel electrode and a second sacrificial layer over the second EL layer;
• a seventh step of removing the first sacrificial layer and the second sacrificial layer;
• and
• an eighth step of drying the first EL layer and the second EL layer,
• wherein each of the first sacrificial layer and the second sacrificial layer comprises a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film.

A method for fabricating a display device, comprising:

• a first step of forming a first EL film over a first pixel electrode and a second pixel electrode;
• a second step of forming a first sacrificial film covering the first EL film;
• a third step of forming a first resist mask over the first sacrificial film in a region overlapping with the first pixel electrode;
• a fourth step of etching the first sacrificial film and the first EL film using the first resist mask to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer;
• a fifth step of forming a second EL film over the first resist mask and the second pixel electrode;
• a sixth step of forming a second sacrificial film covering the second EL film;
• a seventh step of forming a second resist mask over the second sacrificial film in a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode;
• an eighth step of etching the second sacrificial film and the second EL film using the second resist mask to expose the first sacrificial layer and to form a second EL layer over the second pixel electrode and a second sacrificial layer over the second EL layer;
• a ninth step of removing the first sacrificial layer and the second sacrificial layer;
• and
• a tenth step of drying the first EL layer and the second EL layer,
• wherein each of the first sacrificial layer and the second sacrificial layer comprises a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film.