Light-emitting device and light-emitting apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYui Yoshiyasu, Sachiko Kawakami, Naoaki Hashimoto, Tsunenori Suzuki, Satoshi Seo
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYui Yoshiyasu, Sachiko Kawakami, Naoaki Hashimoto, Tsunenori Suzuki, Satoshi Seo
Estimating the term…
A light-emitting device with high resistance to heat in a fabrication process is provided. The light-emitting device includes an EL layer between an anode and a cathode. The EL layer includes at least a light-emitting layer and an electron-transport layer that includes a first electron-transport layer in contact with the light-emitting layer and a second electron-transport layer in contact with the first electron-transport layer. The first electron-transport layer includes a first heteroaromatic compound including at least one heteroaromatic ring. The second electron-transport layer includes a second heteroaromatic compound that includes at least one heteroaromatic ring and is different from the first heteroaromatic compound. The first heteroaromatic compound has a difference of 20° C. or less between the crystallization temperature (Tpc) of a powder state and the crystallization temperature (Ttc) of a thin film state. The second heteroaromatic compound has a difference of 100° C. or less between Tpc and Ttc.
A light-emitting device comprising:
A light-emitting apparatus comprising:
Dependencies are inferred from the claim text.