Light-emitting device and manufacturing method therefor, and display panel

A method for manufacturing a light-emitting device, comprising:

• forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially on a substrate;
• wherein the first semiconductor layer, the light-emitting layer, and the second semiconductor layer form the semiconductor structure;
• patterning the semiconductor structure by a patterning process;
• depositing an insulating medium on the second semiconductor layer, and patterning the insulating medium to form an insulating layer, wherein the insulating layer comprises a first barrier, a second barrier and a third barrier, the first barrier surrounds an outer sidewall of the semiconductor structure, at least a portion of the first barrier protrudes from a surface of the second semiconductor layer, at least a portion of the second barrier protrudes from a central region of the surface of the second semiconductor layer, the third barrier is located on the surface of the second semiconductor layer and is located between the second barrier and the first barrier, the third barrier is spaced apart from the second barrier by a distance, and an edge of the third barrier is connected to the first barrier;
• and
• depositing a metal material layer on the insulating layer, and patterning the metal material layer to form a first electrode and a second electrode, wherein the first electrode covers surfaces of the first barrier and the third barrier which are not in contact with the semiconductor structure, the first electrode is connected to the first semiconductor layer, and the second electrode covers the second barrier and is connected to the second semiconductor layer;
• wherein at least a portion of the second barrier protrudes from the surface of the second semiconductor layer in a direction away from the first semiconductor layer, and at least a portion of the second electrode protrudes from the surface of the second semiconductor layer in the direction away from the first semiconductor layer;
• and
• the second barrier is not in contact with the first electrode.

A display panel, comprising a light-emitting device, wherein the light-emitting device comprises a semiconductor structure, the semiconductor structure comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer arranged in a stack, and the light-emitting device further comprises:

• an insulating layer, wherein the insulating layer comprises a first barrier, a second barrier and a third barrier, the first barrier surrounds an outer sidewall of the semiconductor structure, at least a portion of the first barrier protrudes from a surface of the second semiconductor layer, at least a portion of the second barrier protrudes from a central region of the surface of the second semiconductor layer, the third barrier is located on the surface of the second semiconductor layer, the third barrier is located between the second barrier and the first barrier, the third barrier is spaced apart from the second barrier by a distance, and an edge of the third barrier is connected to the first barrier;
• a first electrode, wherein the first electrode covers surfaces of the first barrier and the third barrier which are not in contact with the semiconductor structure, and the first electrode is connected to the first semiconductor layer;
• and
• a second electrode, wherein the second electrode covers the second barrier and is connected to the second semiconductor layer;
• wherein at least a portion of the second barrier protrudes from the surface of the second semiconductor layer in a direction away from the first semiconductor layer, and at least a portion of the second electrode protrudes from the surface of the second semiconductor layer in the direction away from the first semiconductor layer;
• and
• the second barrier is not in contact with the first electrode.