Light-emitting diode
AssigneeBridgelux Optoelectronics (Xiamen) Co., Ltd.
InventorsShuenTa Teng, Hung-Chih Yang, Chunyu Liu
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Abstract
A light-emitting diode includes an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer and a second P-type semiconductor layer sequentially stacked in that order. The hole diffusion layer includes a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked along a direction from the first P-type semiconductor layer to the second P-type semiconductor layer. The first sub-layer is an AlN layer, the second sub-layer is an AlInGaN layer or an AlGaN layer, and the third sub-layer is an AlInGaN layer or an AlGaN layer. As a result, advantages of alleviating a current crowding problem and improving luminous efficiency can be achieved.
Claims16
A light-emitting diode, comprising an N-type semiconductor layer, a light-emitting layer, a first P-type semiconductor layer, a hole diffusion layer and a second P-type semiconductor layer sequentially stacked in that order;
- wherein the hole diffusion layer comprises a first sub-layer, a second sub-layer, and a third sub-layer sequentially stacked in that order along a direction from the first P-type semiconductor layer to the second P-type semiconductor layer;
- the first sub-layer is an aluminum nitride (AlN) layer, the second sub-layer is one of an aluminum indium gallium nitride (AlInGaN) layer and an aluminum gallium nitride (AlGaN) layer, and the third sub-layer is one of an AlInGaN layer and an AlGaN layer;
- and
- wherein the hole diffusion layer further comprises at least one fourth sub-layer disposed on a side of the third sub-layer facing away from the second sub-layer, and each of the at least one fourth sub-layer comprises an AlGaN layer and a GaN layer stacked.
A light-emitting diode, comprising an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer sequentially stacked in that order, and further comprising a hole diffusion layer located between the light-emitting layer and the P-type semiconductor layer;
- wherein the hole diffusion layer comprises a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked in that order along a direction from the light-emitting layer to the P-type semiconductor layer;
- the first sub-layer is an undoped AlN layer, the second sub-layer is one of an undoped AlInGaN layer and an undoped AlGaN layer, and the third sub-layer is one of an undoped AlInGaN layer and an undoped AlGaN layer;
- and
- wherein the hole diffusion layer further comprises at least one fourth sub-layer disposed on a side of the third sub-layer facing away from the second sub-layer, and each of the at least one fourth sub-layer comprises an AlGaN layer and a GaN layer stacked.
A light-emitting diode, comprising:
- an N-type semiconductor layer, a multilayer structure, and a light-emitting layer arranged between the N-type semiconductor layer and the multilayer structure;
- wherein the multilayer structure comprises:
- a Mg-doped P-type semiconductor layer, and a hole diffusion layer between the Mg-doped P-type semiconductor layer and the light-emitting layer;
- wherein the hole diffusion layer comprises Al-containing sub-layers being not doped with Mg, and Al concentrations of the respective Al-containing sub-layers are gradually decreased along a direction from the light-emitting layer to the Mg-doped P-type semiconductor layer;
- wherein the Al-containing sub-layers comprise a plurality of sequentially stacked single-layered sub-layers and at least one multi-layered sub-layer, and the at least one multi-layered sub-layer is located on a side of the plurality of sequentially stacked single-layered sub-layers facing away from the light-emitting layer;
- and
- wherein each of the at least one multi-layered sub-layer comprises:
- a layer of containing Al, and another layer of not containing Al on a side of the layer of containing Al facing away from the light-emitting layer.
Dependencies are inferred from the claim text.