Light emitting diode having multiple active layers and light emitting device having the same

A light emitting device, comprising:

• a first lead and a second lead;
• a housing covering the first lead and the second lead and defining a cavity;
• and
• a light emitting diode disposed in the cavity of the housing and electrically connected to the first and second leads;
• the light emitting diode, comprising:
• a first conductivity type nitride semiconductor layer;
• a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit;
• a lower active layer disposed on the V-pit generation layer;
• an upper active layer disposed on the lower active layer;
• an intermediate layer disposed between the lower active layer and the upper active layer;
• a second conductivity type nitride semiconductor layer disposed on the upper active layer;
• an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer;
• and
• a lower step coverage layer disposed between the intermediate layer and the lower active layer,
• wherein in the electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region in an electroluminescence spectrum, and
• wherein the lower step coverage layer has a wider band gap than that of the intermediate layer.