Nitride semiconductor light-emitting element

A nitride semiconductor light-emitting element that emits ultraviolet light at a central wavelength of not less than 300 nm and not more than 320 nm, the nitride semiconductor light-emitting element comprising:

• a substrate having a c-plane as a growth surface;
• and
• a nitride semiconductor layer stacked on the growth surface of the substrate,
• wherein the nitride semiconductor layer comprises an n-type semiconductor layer comprising Al, Ga and N, an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer comprising Al, Ga and N, and a p-type semiconductor layer formed on the active layer on the opposite side to the substrate, and
• wherein the active layer comprises a first barrier layer, a second barrier layer and the well layer in this order from the n-type semiconductor layer side, the first barrier layer comprising Al and N, and the second barrier layer comprising Al, Ga, and N and having an Al composition ratio lower than that of the first barrier layer.