Nitride semiconductor light-emitting element

A method for manufacturing a nitride semiconductor light-emitting element, the method comprising:

• forming an n-side layer;
• forming an active layer on the n-side layer;
• and
• forming a p-side layer on the active layer;
• wherein:
• the step of forming the active layer comprises:
• forming a first layered section comprising a first well layer containing In and having a first thickness, and a first barrier layer located on the first well layer and doped with an n-type impurity, the first well layer being formed at a first temperature,
• forming a second layered section on the first layered section, the second layered section comprising a second well layer containing In and having a second thickness greater than the first thickness, and a second barrier layer located on the second well layer and doped with an n-type impurity, the second well layer being formed at a second temperature lower than the first temperature, and
• forming a third layered section on the second layered section, the third layered section comprising a third well layer containing In and having a third thickness less than the second thickness, and a third barrier layer located on the third well layer and doped with a p-type impurity, the third well layer being formed at a third temperature higher than the second temperature.