Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
AssigneeSolarlab Aiko Europe GmbH
InventorsGang Chen, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
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Abstract
A cell assembly includes a first doped region. The first doped region includes a first passivated contact region disposed on the silicon substrate, and a second passivated contact region disposed on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second passivated contact region includes an opening for connecting a conductive layer of the solar cell to the first passivated contact region.
Claims30
A cell assembly, comprising a first doped region, wherein the first doped region comprises:
- a first passivated contact region disposed on a silicon substrate, and a second passivated contact region disposed on the first passivated contact region, wherein
- the first passivated contact region comprises a first doped layer, a first passivation layer, and a second doped layer;
- the second passivated contact region comprises a second passivation layer and a third doped layer;
- the first doped layer, the first passivation layer, the second doped layer, the second passivation layer and the third doped layer are disposed on the silicon substrate in sequence;
- and
- the second passivated contact region comprises an opening for connecting a conductive layer of a solar cell to the first passivated contact region.
A solar cell comprising a first doped region, wherein the first doped region comprises:
- a first passivated contact region disposed on a silicon substrate, and a second passivated contact region disposed on the first passivated contact region, wherein
- the first passivated contact region comprises a first doped layer, a first passivation layer, and a second doped layer;
- the second passivated contact region comprises a second passivation layer and a third doped layer;
- the first doped layer, the first passivation layer, the second doped layer, the second passivation layer and the third doped layer are disposed on the silicon substrate in sequence;
- and
- the second passivated contact region comprises an opening for connecting a conductive layer of a solar cell to the first passivated contact region.
Dependencies are inferred from the claim text.