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US 12,615,871 B2Granted
Image sensing device including through silicon via (TSV) structure
AssigneeSK hynix Inc.
InventorsIn Chul Jeong, Moung Seok Baek
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Abstract
An image sensing device includes a semiconductor substrate, an insulation layer disposed below the semiconductor substrate, a through hole formed to extend to the inside of the insulation layer while penetrating the semiconductor substrate, a through silicon via (TSV) structure formed along an inner surface of the through hole, and a photoresist formed over the TSV to gap-fill at least a portion of the through hole.
Claims19
An image sensing device comprising:
- a semiconductor substrate;
- an insulation layer disposed below the semiconductor substrate, wherein the semiconductor substrate and the insulation layer are structured to form a through hole that penetrates the semiconductor substrate and extends into an inside of the insulation layer;
- a through silicon via (TSV) structure formed along an inner surface of the through hole;
- a photoresist formed over the TSV structure to fill at least a portion of the through hole;
- and
- a color filter material layer disposed over the photoresist within the through hole.
3 more elements
An image sensing device comprising:
- a first substrate including a first front surface and a first back surface opposite to the first front surface;
- a first interlayer insulation layer disposed below the first front surface, and structured to include a first interconnection structure;
- a second substrate including a second front surface and a second back surface opposite to the second front surface;
- a second interlayer insulation layer disposed over the second front surface to be in contact with the first interlayer insulation layer, and structured to include a second interconnection structure;
- a through hole formed to penetrate the first substrate and the first interlayer insulation layer and extending to an inside of the second interlayer insulation layer;
- a through silicon via (TSV) structure disposed along an inner surface of the through hole and configured to electrically connect the first interconnection structure to the second interconnection structure;
- and
- a passivation layer disposed over the TSV structure to fill the through hole;
- wherein the passivation layer includes:
- a first photoreactive material layer formed to fill a lower region of the through hole;
- and
- a second photoreactive material layer disposed over the first photoreactive material layer in the through hole, and having different photoreaction characteristics from the first photoreactive material layer.
9 more elements
Dependencies are inferred from the claim text.