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US 12,615,864 B2Granted
Infrared image sensor component manufacturing method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Ying Wu, Li-Hsin Chu, Chung-Chuan Tseng, Chia-Wei Liu
Life of this patent
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Abstract
A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.
Claims20
A method, comprising:
- forming a III-V compound multilayer stack on a substrate, the III-V compound multilayer stack comprising a plurality of III-V compound layers vertically stacked over the substrate, wherein the plurality of III-V compound layers comprises a first III-V compound layer, a second III-V compound layer above the first III-V compound layer, a third III-V compound layer above the second III-V compound layer, and a fourth III-V compound layer above the third III-V compound layer, wherein the third III-V compound layer has a different energy gap than the second III-V compound layer, and the second III-V compound layer has a different energy gap than the first III-V compound layer, wherein the energy gap of the first III-V compound layer is less than the energy gap of the second III-V compound layer, the energy gap of the second III-V compound layer is less than the energy gap of the third III-V compound layer, wherein the energy gap of the third III-V compound layer is less than an energy gap of the fourth III-V compound layer;
- forming an infrared image sensor on the III-V compound multilayer stack, the infrared image sensor having an active pixel region in the III-V compound multilayer stack;
- forming a pattern shielding a gate structure and a source/drain contact of the infrared image sensor, wherein the source/drain contact has a top surface lower than a top surface of the gate structure;
- and
- forming an infrared filter over the pattern, wherein a portion of the III-V compound multilayer stack is free from coverage by the pattern and is within an irradiation range of an infrared ray passing through the infrared filter.
2 more elements
A method, comprising:
- forming a III-V compound multilayer stack over a substrate, the III-V compound multilayer stack comprising a first III-V compound layer over the substrate, a second III-V compound layer over the first III-V compound layer, and a third III-V compound layer over the second III-V compound layer, wherein the first III-V compound layer has an energy gap narrower than an energy gap of the second III-V compound layer, and the energy gap of the second III-V compound layer is narrower than an energy gap of the third III-V compound layer;
- forming an infrared image sensor on the III-V compound multilayer stack, the infrared image sensor comprising a pixel region in the III-V compound multilayer stack, and a transistor over the pixel region;
- forming a pattern shielding a gate structure and a source/drain contact of the infrared image sensor, wherein the source/drain contact has a height less than a height of the gate structure;
- and
- forming an infrared filter over the pattern, wherein a portion of the III-V compound multilayer stack is free from coverage by the pattern and is within an irradiation range of an infrared ray passing through the infrared filter.
2 more elements
A method comprising:
- epitaxially growing a multilayer stack over a substrate, the multilayer stack comprising a first III-V compound layer over the substrate, a second III-V compound layer over the first III-V compound layer, and a third III-V compound layer over the second III-V compound layer, wherein an energy gap of the first III-V compound layer, an energy gap of the second III-V compound layer, and an energy gap of the third III-V compound layer are different from each other, wherein the energy gap of the first III-V compound layer is narrower than the energy gap of the second III-V compound layer, and the energy gap of the second III-V compound layer is narrower than the energy gap of the third III-V compound layer;
- and
- forming an infrared image sensor on the multilayer stack, the infrared image sensor having a pixel region in the multilayer stack, and a transistor over the pixel region, wherein the infrared image sensor comprises a gate structure and source/drain contacts at opposite sides of the gate structure, wherein the gate structure and the source/drain contacts vertically overlap with the first, second, and third III-V compound layers.
Dependencies are inferred from the claim text.