Electrostatic discharge protection structure and chip

An electrostatic discharge protection structure, comprising:

• a semiconductor substrate;
• an N-type well located in the semiconductor substrate;
• a P-type well located in the semiconductor substrate;
• a first N-type doped portion located in the P-type well, wherein the first N-type doped portion comprises a first extension portion and a second extension portion that are connected to each other;
• wherein an orthographic projection of the first extension portion on a target projection plane extends along a first direction, an orthographic projection of the second extension portion on the target projection plane extends along a second direction, the target projection plane is parallel to a plane where the semiconductor substrate is located, and the first direction intersects the second direction:
• a first P-type doped portion located in the N-type well, wherein the first P-type doped portion comprises a third extension portion, a fourth extension portion, and a fifth extension portion connected between the third extension portion and the fourth extension portion;
• wherein both an orthographic projection of the third extension portion on the target projection plane and an orthographic projection of the fourth extension portion on the target projection plane extend along the second direction, the orthographic projection of the second extension portion on the target projection plane is located between the orthographic projection of the third extension portion on the target projection plane and the orthographic projection of the fourth extension portion on the target projection plane, and an orthographic projection of the fifth extension portion on the target projection plane is located on a side of the orthographic projection of the second extension portion on the target projection plane away from the orthographic projection of the first extension portion on the target projection plane;
• a second P-type doped portion located in the P-type well, wherein an orthographic projection of the second P-type doped portion on the target projection plane extends along the first direction, and is located on a side of an orthographic projection of the first N-type doped portion on the target projection plane away from an orthographic projection of the first P-type doped portion on the target projection plane;
• and
• a second N-type doped portion located in the N-type well, wherein an orthographic projection of the second N-type doped portion on the target projection plane extends along the first direction, and is located on a side of the orthographic projection of the first P-type doped portion on the target projection plane away from the orthographic projection of the first N-type doped portion on the target projection plane;
• wherein the second P-type doped portion is electrically connected to the second N-type doped portion.