Thin-film transistor and arrangement thereof and method for manufacturing same

A method for manufacturing a thin-film transistor, wherein the thin-film transistor comprises:

• a substrate;
• an oxide nanowire, extending in a direction perpendicular to the substrate, and comprising a first end face facing toward the substrate, a second end face facing away from the substrate, and a side surface connecting the first end face and the second end face;
• a gate insulation layer, surrounding the side surface of the oxide nanowire, exposing the second end face of the oxide nanowire, and having a gate insulation layer side surface surrounding the side surface of the oxide nanowire, and a gate insulation layer end face facing away from the substrate and connected to the gate insulation layer side surface;
• a gate electrode, surrounding the gate insulation layer side surface, exposing the second end face of the oxide nanowire, and having a gate electrode side surface surrounding the gate insulation layer side surface, and a gate electrode end face facing away from the substrate and connected to the gate electrode side surface;
• a passivation layer, surrounding the gate electrode side surface, the gate electrode end face and the gate insulation layer end face, exposing the second end face of the oxide nanowire, and having a passivation layer side surface surrounding the gate electrode side surface, and a passivation layer end face covering the gate electrode end face and the gate insulation layer end face;
• a source electrode, located at a same side of the substrate as the oxide nanowire, wherein an orthographic projection of the source electrode on the substrate does not overlap with an orthographic projection of the passivation layer on the substrate;
• in a direction parallel to the substrate, the source electrode is located at a side of the passivation layer facing away from the oxide nanowire;
• and the source electrode is electrically connected to the first end face of the oxide nanowire;
• and
• a drain electrode, located on and in contact with the second end face of the oxide nanowire;
• wherein the method comprises:
• forming an oxide film layer on the substrate and forming the oxide nanowire extending in the direction perpendicular to the substrate by patterning, wherein the oxide film layer comprises a first end face facing toward the substrate, a second end face facing away from the substrate, and a side surface connecting the first end face to the second end face;
• forming the gate insulation layer on the oxide nanowire, wherein the gate insulation layer has the gate insulation layer side surface surrounding the side surface of the oxide nanowire, and the gate insulation layer end face facing away from the substrate and connected to the gate insulation layer side surface;
• forming a gate electrode layer on the gate insulation layer, and patterning the gate electrode layer, to form the gate electrode surrounding the gate insulation layer side surface and exposing the second end face of the oxide nanowire, wherein the gate electrode has the gate electrode side surface surrounding the gate insulation layer side surface, and the gate electrode end face facing away from the substrate and connected to the gate electrode side surface;
• forming the passivation layer on the gate electrode, and patterning the passivation layer, to surround the gate electrode side surface, the gate electrode end face and the gate insulation layer end face, and expose the second end face of the oxide nanowire, wherein the passivation layer has the passivation layer side surface surrounding the gate electrode side surface, and the passivation layer end face covering the gate electrode end face and the gate insulation layer end face;
• and
• forming a metal layer on the passivation layer and the oxide nanowire, and patterning the metal layer, to form the source electrode electrically connected to the first end face of the oxide nanowire, and a drain electrode electrically connected to the second end face of the oxide nanowire;
• wherein the forming a metal layer on the passivation layer and the oxide nanowire, comprises:
• depositing metal on the passivation layer and the oxide nanowire, and
• performing plasma bombarding on the metal deposited on the passivation layer and the oxide nanowire during deposition of the metal, to make an end portion, facing away from the substrate, of the oxide nanowire and the extension portion conductive.